A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors

Cicek O., BADALI Y.

IEEE Transactions on Device and Materials Reliability, cilt.24, sa.2, ss.275-286, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 24 Sayı: 2
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1109/tdmr.2024.3379745
  • Dergi Adı: IEEE Transactions on Device and Materials Reliability
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.275-286
  • Anahtar Kelimeler: breakdown voltage enhancement, field-plated structure, GaN, HEMTs, negative-bias temperature instability, passivation layer, wide-bandgap
  • İstanbul Ticaret Üniversitesi Adresli: Evet

Özet

Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as fundamental semiconductor devices for future power electronic applications. Consequently, researchers have directed their efforts toward enhancing critical parameters such as the breakdown voltage (Vbr), cut-off frequency, and operating temperature. Therefore, this review article explores research endeavors concerning the enhancement of Vbr in GaN-based HEMTs. The objective is to gain insights into the key factors influencing Vbr values and to identify the constraints that govern the optimal performance of HEMTs in power devices. Additionally, this review provides an in-depth examination of select studies that introduce novel techniques for improving Vbr values.