Cicek, O. And BADALI, Y. 2024. A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors. IEEE Transactions on Device and Materials Reliability , vol.24, no.2 , 275-286.

Cicek, O., & BADALI, Y., (2024). A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors. IEEE Transactions on Device and Materials Reliability , vol.24, no.2, 275-286.

Cicek, Osman, And YOSEF BADALI. "A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors," IEEE Transactions on Device and Materials Reliability , vol.24, no.2, 275-286, 2024

Cicek, Osman And BADALI, YOSEF. "A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors." IEEE Transactions on Device and Materials Reliability , vol.24, no.2, pp.275-286, 2024

Cicek, O. And BADALI, Y. (2024) . "A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors." IEEE Transactions on Device and Materials Reliability , vol.24, no.2, pp.275-286.

@article{article, author={Osman Cicek And author={YOSEF BADALI}, title={A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors}, journal={IEEE Transactions on Device and Materials Reliability}, year=2024, pages={275-286} }