Akademik Veri Yönetim Sistemi
Applied Physics A: Materials Science and Processing, cilt.131, sa.8, 2025 (SCI-Expanded)
This study investigates the dielectric properties of aluminum/p-type silicon (Al/p-Si) structures modified by porous silicon (PS) layers formed via electrochemical etching. Porous silicon wafers were prepared under controlled current density conditions, and five distinct regions (P1–P5) were analyzed to assess local variations in surface morphology, chemical composition, and wettability. Surface characterization using energy-dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM) revealed variations in oxygen content and porosity across the wafer, influencing wettability and dielectric behavior. Contact angle measurements demonstrated the combined effects of surface oxidation and pore size on hydrophilicity. Dielectric measurements showed that regions with higher porosity exhibited increased capacitance and dielectric constants, with frequency-dependent behavior attributed to interfacial polarization. These findings highlight the critical role of surface chemistry and morphology in tuning the dielectric response of PS-based devices. The enhanced dielectric properties of the Al/PS/p-Si structures suggest promising applications in microelectronics, biosensors, and energy storage technologies.