21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode

Creative Commons License

Cicek O., Arslan E., ALTINDAL Ş., BADALI Y., Ozbay E.

IEEE Sensors Journal, cilt.22, sa.24, ss.23699-23704, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 22 Sayı: 24
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1109/jsen.2022.3219553
  • Dergi Adı: IEEE Sensors Journal
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.23699-23704
  • Anahtar Kelimeler: Novel drive mode, sensitivity, temperature sensing, vertical metal-oxide-semiconductor (MOS) type diode
  • İstanbul Ticaret Üniversitesi Adresli: Evet

Özet

Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the {S} values of the Ni50nm - Au100nm /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance-voltage (Cm - V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.