Cicek, O. Et Al. 2022. 21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode. IEEE Sensors Journal , vol.22, no.24 , 23699-23704.

Cicek, O., Arslan, E., ALTINDAL, Ş., BADALI, Y., & Ozbay, E., (2022). 21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode. IEEE Sensors Journal , vol.22, no.24, 23699-23704.

Cicek, Osman Et Al. "21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode," IEEE Sensors Journal , vol.22, no.24, 23699-23704, 2022

Cicek, Osman Et Al. "21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode." IEEE Sensors Journal , vol.22, no.24, pp.23699-23704, 2022

Cicek, O. Et Al. (2022) . "21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode." IEEE Sensors Journal , vol.22, no.24, pp.23699-23704.

@article{article, author={Osman Cicek Et Al. }, title={21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode}, journal={IEEE Sensors Journal}, year=2022, pages={23699-23704} }