Influence of Nd2O3-doped PVA interlayer on the optoelectrical response of a photodiode
Physica Scripta, cilt.100, sa.5, 2025 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 100 Sayı: 5
- Basım Tarihi: 2025
- Doi Numarası: 10.1088/1402-4896/adca68
- Dergi Adı: Physica Scripta
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
- Anahtar Kelimeler: neodymium oxide (Nd2O3) nanostructures, optical responsivity, optoelectronic characteristics, photodiode (PD), polymer, Schottky structure
- İstanbul Ticaret Üniversitesi Adresli: Evet
Özet
This study examines the photovoltaic properties of a Schottky photodiode (PD) based on the Au/PVA:Nd2O3/n-Si structure under various light and dark conditions. A PVA polymer layer doped with Nd2O3 is applied to the metal-semiconductor (MS) interface to form a metal-nanocomposite-semiconductor (MNS) Schottky PD. Characterization of the PVA:Nd2O3 nanocomposite is conducted using Fourier Transform Infrared (FTIR) and Attenuated Total Reflection (ATR) analyses. Key electronic properties such as reverse-saturation current (I0), ideality factor (n), series/shunt resistances (Rs/Rsh), barrier height (ΦB0), interface state density (Nss), photocurrent (Iph), photosensitivity (S), optical responsivity (R), and specific detectivity (D*) are analyzed. The nanocomposite enhances photosensitivity, responsivity, and detectivity by 1.7 × 104, 4.79 A W−1, and 1.07 × 1012 Jones, respectively. Results demonstrate that the Au/PVA:Nd2O3/n-Si structure exhibits excellent photo-response, making it a potential replacement for traditional MS-type Schottky PDs in optoelectronics and solar applications.