Experimental Evaluation of SOI Micro-ring Resonators with Different Gap Widths and Radii


Creative Commons License

Öncüer M. H., Üstüner F.

PIERS 2025 Abu Dhabi Progress In Electromagnetics Research Symposium, Abu Dhabi, Birleşik Arap Emirlikleri, 4 - 08 Mayıs 2025, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/piers-spring66516.2025.11276483
  • Basıldığı Şehir: Abu Dhabi
  • Basıldığı Ülke: Birleşik Arap Emirlikleri
  • İstanbul Ticaret Üniversitesi Adresli: Evet

Özet

Optical ring resonators are the workhorse of several optical integrated circuit applications. Their high wavelength selectivity and high quality factor are especially useful to implement tunable laser sources having narrow linewidths. The linewidth at the resonant frequency of a microring resonator depends on the gap width between the ring and the straight waveguide. In this work, it is reported the experimental results of several silicon-on-insulator (SOI) micro-ring resonators designed for having different gap widths (100 nm, 150 nm, 200 nm). Moreover, this comparative work is supplemented with comparison between different radii of micro-ring resonators (5 um, 7.5 um, 10um and 17.5 um). The micro-ring resonators made up of the silicon waveguides having 220nm thick and 500nm width, were manufactured using the electron beam lithography (EBL). Apart from the resonance frequencies and free spectral range (FSR) data, the full width at half maximum (FWHM) bandwidth were extracted from the measured data by observing the intersection of the measured power spectral responses at the drop port and through port of the ring resonators. The relationship between the gap width and FWHM bandwidth was established and thereby FWHM bandwidth can be estimated for other gap widths. Moreover, resonance splitting observed for micro-ring resonators having large gap width and small radius were also reported. The coupling coefficient was estimated using the FWHM and the resonant frequency data.