The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

ULUSOY M., BADALI Y., Pirgholi-Givi G., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş.

Synthetic Metals, cilt.292, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 292
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.synthmet.2022.117243
  • Dergi Adı: Synthetic Metals
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Doped-organic interface, Conductance method, Interface states, Relaxation time, Frequency-dependent characteristics
  • İstanbul Ticaret Üniversitesi Adresli: Evet

Özet

The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/ω) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 Ω at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/ω curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 × 1013 eV−1.cm−2 at 0.478 eV, its minimum value is 1.23 × 1013 eV−1.cm−2 at 0.540 eV. The relaxation time (τ) values change from 2.40 × 10−5 to 2.03 × 10−4 s in exponentially increasing values. It can be stated that there is an inverse relationship between the τ and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.