Y. BADALI Et Al. , "Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures," Applied Physics A: Materials Science and Processing , vol.127, no.9, 2021
BADALI, Y. Et Al. 2021. Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures. Applied Physics A: Materials Science and Processing , vol.127, no.9 .
BADALI, Y., Farazin, J., Pirgholi-Givi, G., ALTINDAL, Ş., & Azizian-Kalandaragh, Y., (2021). Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures. Applied Physics A: Materials Science and Processing , vol.127, no.9.
BADALI, YOSEF Et Al. "Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures," Applied Physics A: Materials Science and Processing , vol.127, no.9, 2021
BADALI, YOSEF Et Al. "Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures." Applied Physics A: Materials Science and Processing , vol.127, no.9, 2021
BADALI, Y. Et Al. (2021) . "Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures." Applied Physics A: Materials Science and Processing , vol.127, no.9.
@article{article, author={YOSEF BADALI Et Al. }, title={Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures}, journal={Applied Physics A: Materials Science and Processing}, year=2021}