Arslan, E. Et Al. 2020. Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity. Journal of Materials Science: Materials in Electronics , vol.31, no.16 , 13167-13172.

Arslan, E., BADALI, Y., ALTINDAL, Ş., & Özbay, E., (2020). Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity. Journal of Materials Science: Materials in Electronics , vol.31, no.16, 13167-13172.

Arslan, Engin Et Al. "Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity," Journal of Materials Science: Materials in Electronics , vol.31, no.16, 13167-13172, 2020

Arslan, Engin Et Al. "Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity." Journal of Materials Science: Materials in Electronics , vol.31, no.16, pp.13167-13172, 2020

Arslan, E. Et Al. (2020) . "Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity." Journal of Materials Science: Materials in Electronics , vol.31, no.16, pp.13167-13172.

@article{article, author={Engin Arslan Et Al. }, title={Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity}, journal={Journal of Materials Science: Materials in Electronics}, year=2020, pages={13167-13172} }