Boughdachi, S. Et Al. 2018. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K. Journal of Electronic Materials , vol.47, no.12 , 6945-6953.

Boughdachi, S., BADALI, Y., Azizian-Kalandaragh, Y., & ALTINDAL, Ş., (2018). Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K. Journal of Electronic Materials , vol.47, no.12, 6945-6953.

Boughdachi, S. Et Al. "Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K," Journal of Electronic Materials , vol.47, no.12, 6945-6953, 2018

Boughdachi, S. Et Al. "Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K." Journal of Electronic Materials , vol.47, no.12, pp.6945-6953, 2018

Boughdachi, S. Et Al. (2018) . "Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K." Journal of Electronic Materials , vol.47, no.12, pp.6945-6953.

@article{article, author={S. Boughdachi Et Al. }, title={Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K}, journal={Journal of Electronic Materials}, year=2018, pages={6945-6953} }